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ROHM
ROHM - Silicon Carbide MOSFET
SCTXXXX series, SCHXXXX series
In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. SiC exhibits minimal ON resistance increases and provides greater package miniaturization, and energy savings than Si devices, in which the ON resistance can more than double with increased temperature.

SiC MOSFETs eliminate tail current during switching, resulting in faster operation, reduced switching loss, and increased stabilization. Lower ON resistance and a compact chip size result in reduced capacitance and gate charge. In addition, SiC exhibits superior material properties, such as minimal ON-resistance increases, and enables greater package miniaturization and energy savings than silicon (Si) devices, in which the ON resistance can more than double with increased temperature.
ROHM’s 4th Generation SiC MOSFET
Our latest 4th Gen SiC MOSFETs provide industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.
*ROHM Authorized Distributor
ROHM’s 4th Generation SiC MOSFET
Our latest 4th Gen SiC MOSFETs provide industry-leading low ON resistance with improving short-circuit withstand time. Additional features include low switching loss and support for 15V gate-source voltage that contributes to further device power savings.
*ROHM Authorized Distributor